高质量的化物III-V半导体量子点的通用合成途径
Tianshuo Zhao, Nuri Oh1, Davit Jishkariani
1Division of Materials Science and Engineering , Hanyang University , Seoul 04763 , Republic of Korea.
Journal of the American Chemical Society
|September 10, 2019
概括
研究人员开发了使用可访问的前体合成体III-V量子点 (QD) 的新方法. 这些可调节的化和化QD显示为红外光电子设备的前景.
科学领域:
- 材料科学
- 纳米技术
- 固态物理
背景情况:
- 体III-V量子点 (QD) 合成,特别是化物和抗氧化物,受到不稳定的V组前体的阻碍.
- 可获取的 (In) 和化物-奥莱胺前体为QD合成提供了可行的替代品.
研究的目的:
- 合成可调整尺寸的二元 InAs,InSb 和三元 InAsSb QD.
- 研究合金对QD形成和光电子特性的影响.
- 为红外光电子应用开发改进的III-V QD薄膜.
主要方法:
- 使用InCl3和pnictogen化物-oleylamine前体的相关减排反应.
- 包括结构,分析,光学和电气方法在内的综合性表征.
- 用于薄膜制造的无素混合联体交换工艺.
主要成果:
- 成功合成可调节的二进制 InAs,InSb 和三进制 InAsSb QD.
- 经过合金的影响,具有可调整尺寸和立体测量的光电子特性.
- 具有超过 5 cm2 / V s 的电子移动性的 InAs QD 场效应晶体管.
- 与二进制QD相比,开发了具有增强短波红外 (SWIR) 光响应的InAsSb QD光导体.
结论:
- 可访问的前体使可调的III-V QD合成成为可能.
- 合金对QD性能产生重大影响,为材料优化提供了途径.
- 对于红外设备来说,III-V QD薄膜是有前途的,三元合金显示出优越的SWIR性能.
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