室温金属导电性在金属-有机框架诱导氧化
Andrew J Clough1, Nicholas M Orchanian1, Jonathan M Skelton2
1Department of Chemistry , University of Southern California , Los Angeles , California 90089 , United States.
Journal of the American Chemical Society
|September 26, 2019
概括
高质量的铁金属有机框架 (MOF) 在冷却时从半导体转变为金属. 暴露在空气中进一步增强了这种金属导电性,为先进的电子设备铺平了道路.
科学领域:
- 材料科学
- 固态物理
- 化学学
背景情况:
- 具有氧化还原活性连接器的金属有机框架 (MOF) 由于高电导率,对电子和电催化有希望.
- 许多2D MOF被计算预测为金属,但实验数据通常显示半导体的行为在冷却时的导电性下降.
- 很少有MOF表现出金属性质,导电性在冷却时增加,因此需要进一步研究导电性起源.
研究的目的:
- 为了研究高晶度铁2,3,6,7,10,11-三乙 (THT) MOF,FeTHT的电导率.
- 了解客物种和空气暴露对FeTHT电子特性的影响.
- 探索FeTHT在化学阻抗传感和光电子方面的应用潜力.
主要方法:
- 合成高晶体铁2,3,6,7,10,11-三乙 (FeTHT) MOF与最小的客物种.
- 用于观察电子转换的可变温度导电性测量.
- 将FeTHT暴露在空气中,以研究其对导电性和过渡温度的影响.
主要成果:
- 高晶度FeTHT在冷却 (100-300K) 时表现出复杂的半导体到金属的转变.
- 暴露在空气中显著改变过渡温度,并导致室温及以上的金属导电性.
- FeTHT表现出对兴奋剂的耐受性,导致电荷移位和增强导电性.
结论:
- 实现高晶度和去除寄宿物种对于观察MOF的内在电子特性至关重要.
- 暴露在空气中可以调整FeTHT的电子特性,促进金属导电性.
- FeTHT可调节的金属导电性使其成为化学阻抗传感器和光电子设备的有希望的候选者.
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