一个极化诱导的2D洞气体在未使用的化量子井中
Reet Chaudhuri1, Samuel James Bader2, Zhen Chen2
1School of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14853, USA. rtc77@cornell.edu.
概括
研究人员在化中创建了一个高密度的二维 (2D) 孔气体,没有添加剂. 这一突破使得宽带电子的低电阻p通道晶体管成为可能.
科学领域:
- 材料科学
- 凝聚物质物理学
- 半导体物理
背景情况:
- 对于先进的电子产品来说,开发宽带间隙p通道晶体管至关重要.
- 高导电性二维 (2D) 孔气对于这些设备至关重要,但在化物半导体中具有挑战性.
- 现有的方法通常依赖于接受剂,这可能会限制性能.
研究的目的:
- 在化物半导体中观察到高密度的二维孔气体.
- 证明这种二维洞可以在没有受体剂的情况下形成.
- 描述这种新型二维孔气体对潜在设备应用的特性.
主要方法:
- 化 (GaN) 在化 (AlN) 基板上的表面增生.
- 使用霍尔效应测量测量二维孔气密度.
- 在各种温度下,包括冷条件下的板材抗性的表征.
主要成果:
- 在GaN/AlN异构中观察极化诱导的二维孔气体.
- 达到大约5 × 10 ^ 13cm ^ 2的高二维孔气体密度.
- 证明了稳定的孔气密度到冷温度.
- 实现了一些在宽带间隙半导体中报告的最低p型板电阻.
结论:
- 在GaN/AlN中,极化效应使得高质量的二维孔气体可以在没有剂的情况下形成.
- 这些发现为先进的宽带间隙p通道晶体管铺平了道路.
- 观察到的二维孔气体是化物接口物理学的基础研究的宝贵平台.
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