在CMOS级电压下操作的纳米光电机械开关
Christian Haffner1,2,3, Andreas Joerg4, Michael Doderer4
1Institute of Electromagnetic Fields (IEF), ETH Zurich, 8092 Zurich, Switzerland. christian.haffner@nist.gov.
概括
研究人员开发了一种新的混合光子-等离子装置,用于快速,低损耗的光切换,使用互补的金属氧化物半导体 (CMOS) 电压. 这一突破使得芯片上的光电子和光神经网络成为可能.
科学领域:
- 光电子产品
- 纳米光子学
- 塑制剂
- 综合光子学
- 在 MEMS/NEMS 中
背景情况:
- 在芯片上集成的光电子需要光网络和互补的金属氧化物半导体 (CMOS) 电子之间的无接口.
- 现有技术在实现高效,低损耗和高速度光调节方面面临挑战,这与CMOS制造相兼容.
研究的目的:
- 通过使用CMOS兼容的电压来证明一种混合光子-等离子结构.
- 实现芯片内光学系统的快速切换速度,光学损失最小.
主要方法:
- 使用金膜创建可变空气间隙的微米级混合光子-等离子波导的制造.
- 利用光电机械效应,其中静电驱动调节空气间隙,改变光束.
- 在空气间隙内集成等离子封闭,以实现强大的光电机械合和光子封闭,以最大限度地减少损失.
主要成果:
- 在CMOS电压下成功演示光线切换,光学损失非常低,为0.1分贝.
- 由于金膜的低质量, 实现了几十纳秒的快速切换速度.
- 由于可变空气间隙中的等离子光束限制,观察到强烈的光电机械效应.
结论:
- 开发的混合架构为创建CMOS集成的可重编程光学系统提供了可行的途径.
- 这项技术在诸如深度学习的光学神经网络等领域具有显著的应用潜力.
- 展示的方法为具有高性能和可扩展性的先进芯片上的光电子设备铺平了道路.
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