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高效且稳定的InP/ZnSe/ZnS量子点发光二极管

Yu-Ho Won¹, Oul Cho¹, Taehyung Kim¹

¹Samsung Advanced Institute of Technology, Samsung Electronics, Suwon, South Korea.

|November 29, 2019

概括

研究人员开发了新的化物 (InP) 量子点 (QD) 发光二极管 (LED),其性能与基于的有毒装置相匹配. 这些环保QD-LED为下一代显示器提供高效率和长寿命.

科学领域:

材料科学
光电子产品
纳米技术

背景情况:

量子点发光二极管 (LED) 为显示器提供了卓越的效率和颜色纯度.
目前的QD-LED通常使用有毒的,而酸 (InP) 替代品的性能落后.
提高运行稳定性和取代是主要的研究目标.

研究的目的:

开发一种高性能,无的InP/ZnSe/ZnS核心/外量子点的合成方法.
设计QD特性,以提高QD-LED的效率,稳定性和充电注入.
实现与最先进的基QD-LED相匹配的性能.

主要方法:

在ZnSe外生长过程中对InP核心进行酸蚀刻的新型合成.
高温 (340°C) ZnSe外生长以优化厚度并抑制能量转移/Auger重组.
表面连接体交换到较短的连接体以改善充电注入.

主要成果:

实现了统一的InP核心和高度对称的核心/外QD,具有~100%的量子产量.
优化的InP/ZnSe/ZnS QD-LED显示出理论上的最大外部量子效率为21.4%.
设备的最大亮度达到100,000 cd/m2,预计使用寿命为100 cd/m2的100万小时.

结论:

开发的基于InP的QD-LED可以与基于的设备相提并论.
这一突破为商业显示应用提供了可行的,对环境无害的替代方案.
预计将进一步将这些InP QD-LED用于显示器上市.

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