了解原子层沉积中非理想性的电子缺陷抑制机制
Mahmut Sami Kavrik1, Aaron Bostwick2, Eli Rotenberg2
1Materials Science and Engineering , University of California San Diego , La Jolla , California 92093 , United States.
Journal of the American Chemical Society
|November 30, 2019
概括
这项研究通过在原子层沉积 (ALD) 过程中使用周期性臭氧暴露来证明一种减少 (SiGe) 电子设备缺陷的新方法. 这种技术显著提高了基于SiGe的量子计算和神经形态应用的性能.
科学领域:
- 材料科学
- 半导体物理
- 纳米技术
背景情况:
- 对量子计算机和晶体管等先进电子设备至关重要.
- 表面状态和SiGe-氧化物接口的电荷陷,由GeO2形成造成,阻碍了设备的性能.
- 传统的原子层沉积 (ALD) 难以防止GeO2的形成,导致界面缺陷.
研究的目的:
- 研究和利用非理想的ALD中的扩散过程,使SiGe的界面缺陷变得无源.
- 展示在氧化物沉积过程中抑制电荷陷的方法.
- 为了减少 SiGe 装置中带间隙的集成陷密度 (Dit).
主要方法:
- 在SiGe的Al2O3和HfO2的ALD过程中使用周期性臭氧暴露作为二次氧化剂.
- 在非理想的ALD过程中通过门氧化物进行反应物种扩散的研究.
- 使用扫描传输电子能量损失光谱 (STEM-EELS) 来确认Ge耗尽和SiO2丰富的接口形成.
主要成果:
- 在Al2O3 (<6 × 10^10 cm^-2) 和HfO2 (<3.9 × 10^11 cm^-2) 门介电器中,整合陷密度 (Dit) 降低了近一个数量级.
- 通过从接口层中消耗Ge,在SiGe上形成一个富含SiO2的接口.
- 使用STEM-EELS确认了O2的形成和脱落,并确定了缺陷减少机制.
结论:
- 在ALD期间定期暴露于臭氧,通过促进SiO2丰富的接口,有效地抑制SiGe的接口缺陷.
- 在非理想的ALD过程中,工程扩散物种为缺陷抑制提供了可行的纳米尺度机制.
- 这种方法增强了SiGe在高性能电子和量子计算应用中的潜力.
更多相关视频
06:57Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
Published on: July 17, 2020
2.6K
11:33All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
Published on: January 19, 2018
10.2K
相关概念视频
01:24Metal-Semiconductor Junctions
838
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
838
01:12Fermi Level Dynamics
606
The vacuum level denotes the energy threshold required for an electron to escape from a material surface. It is usually positioned above the conduction band of a semiconductor and acts as a benchmark for comparing electron energies within various materials.
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
606
01:27Schottky Barrier Diode
881
Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
881