在可扩展的半导体设备中集成的单旋电气和光学控制
Christopher P Anderson1,2, Alexandre Bourassa1, Kevin C Miao1
1Pritzker School of Molecular Engineering, University of Chicago, Chicago, IL 60637, USA.
Science (New York, N.Y.)
|December 7, 2019
概括
碳化的旋转缺陷提供了长相连贯性和旋转光子接口. 研究人员设计了二极管来控制它们的电环境, 显著缩小了光线宽度, 以获得更好的量子系统.
科学领域:
- 量子计算和固体物理.
- 半导体设备制造和量子信息科学.
背景情况:
- 碳化 (SiC) 具有极好的电子自旋相干性.
- 这些缺陷具有近红外自旋光子接口, 适合量子应用.
- SiC与已知的半导体制造技术兼容.
研究的目的:
- 在碳化中整合单个中性分离线.
- 制造用于调节这些旋转的电环境的装置.
- 为了证明量子系统的电荷状态控制和 Stark-shift调整.
主要方法:
- 在商用p-i-n二极管结构中集成高度连贯的单中性二极管.
- 制造二极管以精确控制旋转器的局部电气环境.
- 使用电调节来实现充电状态控制和 Stark 调节.
主要成果:
- 实现了电荷状态控制.
- 已经证明了超过850GHz的宽 Stark 调整.
- 通过充电耗尽观察到光线宽度缩小了50倍,接近寿命限制.
结论:
- 工程电气环境减轻了固态发射器中的光谱扩散.
- 经典的半导体设备可以控制可扩展的,基于自旋的量子系统.
- 这项工作推动了使用碳化自旋缺陷的强大量子技术的发展.
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