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通过二维半导体⁶直接检测热中子

Daniel G Chica¹, Yihui He¹, Kyle M McCall^1,2

¹Department of Chemistry, Northwestern University, Evanston, IL, USA.

|January 17, 2020

概括

研究人员开发了一种新的半导体材料LiInP2Se6, 这种材料具有很高的效率和替代3计数器等现有技术的潜力.

科学领域:

材料科学
核仪器设备
固态物理

背景情况:

高效的中子探测器对于国家安全,医学,晶体学和天文学至关重要.
目前的技术,如-3 (3He) 气充电计数器和闪光灯,具有局限性.
半导体材料为下一代中子探测器提供了潜在的优势,因为它们的紧尺寸和高的内在效率.

研究的目的:

识别和评估用于直接热中子检测的新型半导体材料.
证明印化 (LiInP2Se6) 作为直接转换半导体检测材料的潜力.
在室温下评估LiInP2Se6探测器的性能.

主要方法:

研究了半导体化合物LiInP2Se6的中子捕获截面,带隙和电子带结构.
使用来自241Am源的α粒子来模拟LiInP2Se6探测器中的中子捕获反应.
通过6Li丰富的LiInP2Se6探测器使用中和- (Pu-Be) 中子源进行了直接中子探测实验.

主要成果:

LiInP2Se6具有适合的带隙 (2.06 eV) 和电子带结构以实现高效的电荷传输.
在与α粒子测试时,二维 (2D) LiInP2Se6探测器实现了13.9%的能量分辨率.
使用6Li丰富的LiInP2Se6探测器成功证明了直接的热中子检测,实现了全峰分辨率.

结论:

LiInP2Se6是室温直接热中子检测的有希望的候选材料.
开发的半导体探测器显示出超越现有技术的潜力,包括3He计数器.
这项研究为基于半导体的先进中子探测系统铺平了道路.

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