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Updated: May 4, 2026

Characterization of Full Set Material Constants and Their Temperature Dependence for Piezoelectric Materials Using Resonant Ultrasound Spectroscopy
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具有超高压电性的透明铁电晶体

Chaorui Qiu1, Bo Wang2, Nan Zhang1

  • 1Electronic Materials Research Laboratory (Key Lab of Education Ministry), State Key Laboratory for Mechanical Behavior of Materials and School of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an, China.

Nature
|January 17, 2020
PubMed
概括

研究人员通过在PMN-PT晶体中设计铁电域结构来开发透明的压电材料. 这一突破实现了高透明度和压电性, 实现了先进的混合光学超声波设备.

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相关概念视频

P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
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