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相关概念视频

MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

703
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
703

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相关实验视频

Updated: Dec 28, 2025

Low-cost Custom Fabrication and Mode-locked Operation of an All-normal-dispersion Femtosecond Fiber Laser for Multiphoton Microscopy
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带有谷边模式的电拓激光器

Yongquan Zeng1, Udvas Chattopadhyay2, Bofeng Zhu2

  • 1Centre for OptoElectronics and Biophotonics, School of Electrical and Electronic Engineering & The Photonics Institute, Nanyang Technological University, Singapore, Singapore.

Nature
|February 14, 2020
PubMed
概括

这项研究介绍了使用拓保护的谷边状态的第一个电的特拉赫兹量子级联激光器. 这种紧的拓激光绕过了缺陷,为驱动激光源的实际应用铺平了道路.

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科学领域:

  • 光子学
  • 凝聚物质物理学
  • 量子级联激光器

背景情况:

  • 量子级联激光器 (QCL) 是重要的中红外和太赫兹光源.
  • 拓概念已经扩展到光子学,使强大的激光模式成为可能.
  • 之前的拓激光器需要外部光学并以光学频率运行.

研究的目的:

  • 展示使用拓保护的电式量子级联激光器.
  • 开发一个紧的拓激光设计利用山谷边缘状态.
  • 在半导体激光器中探索拓保护的实际应用.

主要方法:

  • 一个电的特拉赫兹量子级联激光的制造.
  • 使用自由度谷的紧光子晶体设计的实施.
  • 在三角腔中利用拓保护的山谷边缘状态进行激光.

主要成果:

  • 在一个电的特拉赫兹QCL中成功演示激光.
  • 顶层保护的山谷边缘状态使激光在一个紧的,尖的三角形腔中实现.
  • 激光模式表现出对干扰的强度,并且没有局部化.

结论:

  • 这项工作引入了第一个电驱动的拓激光器.
  • 基于谷边状态的紧设计为拓光子学提供了一种新的方法.
  • 开发的激光技术对半导体设备的拓保护具有前景.