在Cu (111) 上,单晶六角化单层
Tse-An Chen1, Chih-Piao Chuu1, Chien-Chih Tseng2
1Corporate Research, Taiwan Semiconductor Manufacturing Company (TSMC), Hsinchu, Taiwan.
Nature
|March 6, 2020
概括
研究人员在铜 (111) 薄膜上实现了晶圆尺度,单晶六角化物 (hBN) 的生长. 通过克服材料质量和制造兼容性的先前限制, 这一突破使得先进的二维电子成为可能.
科学领域:
- 材料科学
- 固态物理
- 纳米技术
背景情况:
- 二维 (2D) 层级材料对于超越摩尔定律的半导体技术的发展至关重要.
- 六角化物 (hBN) 作为一个优秀的介面介电,减轻2D半导体中的电荷散射.
- 现有的单晶hBN种植方法面临着工业可扩展性和制造兼容性的挑战.
研究的目的:
- 开发一种可靠的晶圆尺度方法,用于生长单晶六角化 (hBN) 薄膜.
- 克服在铜 (111) 表面实现单向hBN增长的理论和实际障碍.
- 在先进的二维电子设备中展示晶圆尺度hBN的集成.
主要方法:
- 在一个铜 (111) 薄膜上沉积在蓝宝石晶片上,单晶hBN单层的表面增长.
- 使用第一原理计算来理解生长机制和表面相互作用.
- 使用培养的hBN作为MoS2和HfO2之间的接口层制造的底门晶体管.
主要成果:
- 在2英寸晶片上的Cu (111) 薄膜上成功实现了单晶hBN单层的表轴生长.
- 第一个原则计算证实了hBN与Cu (111) 步骤的侧向对接增强了单向性.
- 采用单晶 hBN 接口层的晶体管具有更高的电性能.
结论:
- 已经建立了一种新的可靠方法来生产单晶hBN.
- 这一进步解决了微电子的二维材料集成的关键问题.
- 开发的方法为电子领域广泛采用二维分层材料铺平了道路.
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