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研究领域物理科学原子,分子和光学物理激光和量子电子
在金属化物矿太阳能电池中解决陷状态的空间和能量分布

在金属化物矿太阳能电池中解决陷状态的空间和能量分布

Zhenyi Ni ¹, Chunxiong Bao ², Ye Liu ^1,2, Qi Jiang ¹, Wu-Qiang Wu ¹, Shangshang Chen ¹, Xuezeng Dai ¹, Bo Chen ¹, Barry Hartweg ³, Zhengshan Yu ³, Zachary Holman ³, Jinsong Huang ^4,2

Zhenyi Ni ¹, Chunxiong Bao ², Ye Liu ^1,2

¹Department of Applied Physical Sciences, University of North Carolina, Chapel Hill, NC 27599, USA.
²Department of Mechanical and Materials Engineering and Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, NE 68588, USA.
³School of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, AZ 85287, USA.
⁴Department of Applied Physical Sciences, University of North Carolina, Chapel Hill, NC 27599, USA. jhuang@unc.edu.

⁰Department of Applied Physical Sciences, University of North Carolina, Chapel Hill, NC 27599, USA.

Science (New York, N.Y.) +

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2020年三月21日

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在PubMed上查看摘要

概括

此摘要是机器生成的。

我们分析了矿太阳能电池中的陷状态. 单晶的捕获密度较低,而多晶薄膜和接口的捕获密度显著更高,限制了效率.

科学领域

材料科学
固态物理
可再生能源

背景情况

金属化是有前途的光伏材料.
了解电荷载体动态对于提高太阳能电池性能至关重要.
陷状态显著影响电荷重组和设备效率.

研究的目的

在单晶和多晶矿太阳能电池中的空间和能量特征.
确定陷状态的起源和分布.
了解陷状态对太阳能电池效率的限制.

主要方法

陷状态的空间和能量分布的描述.
在单晶矿样本中分析陷密度.
在多晶膜及其接口中捕获密度的表征.

主要成果

单晶陷密度有五个数量级的变化,最少为2 × 10^11 cm^-3,主要在晶体表面.
多晶膜接口的陷密度比它们的内部密度高1-2个数量级.
薄膜内部比高质量的单晶体差2-3个数量级;被动化揭示了与纳米晶体相关的孔运输层接口附近的陷.

结论

陷状态分布高度依赖于晶体结构和形态.
多晶膜中的接口是电荷载体损失的主要来源.
纳米晶体接口对高效矿太阳能电池构成重大挑战.

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相关概念视频

P-N junction

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...

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