对拓反铁磁状态的电气操作
Hanshen Tsai1,2, Tomoya Higo1,2, Kouta Kondou2,3
1Institute for Solid State Physics, University of Tokyo, Kashiwa, Japan.
Nature
|May 1, 2020
概括
研究人员在室温下证明了抗铁磁维尔金属的电转换. 这一突破使得对拓状态的控制成为可能,为先进的反铁磁自旋技术和拓磁技术铺平了道路.
科学领域:
- 凝聚物质物理学
- 材料科学
- 机器人
背景情况:
- 由于保护带拓,拓材料,如韦尔半金属,提供了强大的现象.
- 磁性韦尔半金属对于控制拓性质至关重要,使反铁磁性自旋技术成为可能.
- 威尔金属的电气控制仍然是一个未实现的目标,阻碍了技术应用.
研究的目的:
- 证明一个拓反铁磁状态的电转换.
- 在室温下通过异常霍尔效应 (AHE) 检测这种切换.
- 探索使用韦尔金属的反铁磁自旋技术的潜力.
主要方法:
- 制造抗铁磁Weyl金属Mn3Sn的多晶薄膜
- 使用Mn3Sn和非磁性金属 (Pt,Cu,W) 的双层装置.
- 使用电流密度 (10^10到10^11 A/m^2) 来诱导磁切换和测量霍尔电压.
主要成果:
- 在室温下成功切换Mn3Sn的拓反铁磁状态.
- 通过Hall电压的显著变化检测开关,证明零场AHE.
- 观察到相邻的非磁性金属的电流极度和旋转霍尔角决定了霍尔电压标志.
结论:
- 这项研究实现了对抗铁磁Weyl金属的电控,这是一个显著的进步.
- 这些发现支持对高密度,超快速设备的反铁磁自旋技术的使用.
- 这项工作为拓磁性和先进的电子技术开辟了新的途径.
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