相关实验视频

Updated: Dec 21, 2025

Epitaxial Nanostructured α-Quartz Films on Silicon: From the Material to New Devices
11:34

Epitaxial Nanostructured α-Quartz Films on Silicon: From the Material to New Devices

Published on: October 6, 2020

5.8K

在上直接培养的超薄膜中增强的铁电性

Suraj S Cheema1, Daewoong Kwon2,3, Nirmaan Shanker4,2

  • 1Department of Materials Science and Engineering, University of California, Berkeley, CA, USA. s.cheema@berkeley.edu.

Nature
|May 21, 2020
PubMed
概括

这项研究已被修改. 请参阅最新的调查结果和分析.

科学领域:

  • 在摘要中没有说明.

更多相关视频

Chemical Synthesis of Porous Barium Titanate Thin Film and Thermal Stabilization of Ferroelectric Phase by Porosity-Induced Strain
08:00

Chemical Synthesis of Porous Barium Titanate Thin Film and Thermal Stabilization of Ferroelectric Phase by Porosity-Induced Strain

Published on: March 27, 2018

11.4K
Bulk and Thin Film Synthesis of Compositionally Variant Entropy-stabilized Oxides
09:41

Bulk and Thin Film Synthesis of Compositionally Variant Entropy-stabilized Oxides

Published on: May 29, 2018

9.9K

相关实验视频

Last Updated: Dec 21, 2025

Epitaxial Nanostructured α-Quartz Films on Silicon: From the Material to New Devices
11:34

Epitaxial Nanostructured α-Quartz Films on Silicon: From the Material to New Devices

Published on: October 6, 2020

5.8K
Chemical Synthesis of Porous Barium Titanate Thin Film and Thermal Stabilization of Ferroelectric Phase by Porosity-Induced Strain
08:00

Chemical Synthesis of Porous Barium Titanate Thin Film and Thermal Stabilization of Ferroelectric Phase by Porosity-Induced Strain

Published on: March 27, 2018

11.4K
Bulk and Thin Film Synthesis of Compositionally Variant Entropy-stabilized Oxides
09:41

Bulk and Thin Film Synthesis of Compositionally Variant Entropy-stabilized Oxides

Published on: May 29, 2018

9.9K

相关概念视频

Types of Semiconductors01:20

Types of Semiconductors

1.2K
Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
1.2K
JoVE
关于 JoVE
概览领导团队博客JoVE 帮助中心
作者
出版流程编辑委员会范围与政策同行评审常见问题投稿
图书馆员
用户评价订阅访问资源图书馆顾问委员会常见问题
研究
JoVE JournalMethods CollectionsJoVE Encyclopedia of Experiments存档
教育
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab Manual教师资源中心教师网站
使用条款与条件
隐私政策
政策
Jove
Visualize
联系我们