散装单晶范德瓦尔斯半导体中的特殊可塑性
Tian-Ran Wei1,2, Min Jin3, Yuecun Wang4
1State Key Laboratory of Metal Matrix Composites, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, China.
Science (New York, N.Y.)
|August 1, 2020
概括
化 (InSe) 具有显著的超塑性,可以在室温下显著变形. 这一发现为新的,灵活的无机电子铺平了道路.
科学领域:
- 材料科学
- 固态物理
- 纳米技术
背景情况:
- 无机半导体对于电子来说至关重要,但通常是脆弱的.
- 开发可变形无机材料对于下一代灵活的电子产品至关重要.
研究的目的:
- 报告化 (InSe) 的超塑性可变性.
- 为了研究InSe的特殊可塑性背后的机制.
- 提出一种识别其他可变形半导体的方法.
主要方法:
- 大量单晶InSe的实验性表征.
- 分析变形机制,包括层间滑动和脱位滑动.
- 原子间相互作用的理论建模.
主要成果:
- 大量单晶InSe在室温下表现出超塑性变形性,能够承受很大的压力.
- 它可以塑造出复杂的形状,
- 塑性归因于层间滑动和跨层滑动,由库伦相互作用和软结合驱动.
结论:
- 化是一种高度可变形的无机半导体,具有灵活电子的潜力.
- 发现的变形机制为设计新的灵活电子材料提供了洞察力.
- 一个新的可变性指标 (Ξ) 可以帮助选高级应用的候选半导体.
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