电离辐射对超导量子比特连贯性的影响
Antti P Vepsäläinen1, Amir H Karamlou2, John L Orrell3
1Massachusetts Institute of Technology, Cambridge, MA, USA. avepsala@mit.edu.
Nature
|August 28, 2020
概括
来自宇宙射线和放射性物质的电离辐射显著增加了超导量子位中的准粒子密度. 辐射屏蔽可以提高量子位相干时间,
科学领域:
- 量子计算
- 超导量子装置
- 固态物理
背景情况:
- 超导量子比特是量子技术的领先平台,
- 超导量子比特的连贯性受到准粒子的限制,
- 实验观察到的准粒子密度是平衡理论预测的数量级高,红外光子有所贡献,但不能完全解释过量.
研究的目的:
- 找出导致超导量子位中高粒子密度的缺失机制.
- 研究电离辐射在准粒子生成中的作用.
- 评估辐射屏蔽对量子比特性能的影响.
主要方法:
- 在超导量子位中实验测量准粒子密度.
- 对电离辐射源 (环境放射性物质,宇宙射线) 的受控暴露.
- 实施辐射屏蔽并测量由此产生的能量放松时间的变化.
主要成果:
- 有证据表明,电离辐射显著增加了准粒子密度.
- 预测这种高密度限制了当前量子比特设计的连贯时间.
- 证明辐射屏蔽减少了电离辐射流量,并增加了能量放松时间.
结论:
- 电离辐射是影响超导量子比特性能的关键因素,
- 减轻电离辐射对于实现容错量子计算所需的连贯时间至关重要.
- 辐射屏蔽提供了一种可行的方法来提高量子比特的一致性.
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