在电路量子电动学的值处工作的博洛米特
R Kokkoniemi1,2, J-P Girard1, D Hazra1,3
1QCD Labs, QTF Centre of Excellence, Department of Applied Physics, Aalto University, Espoo, Finland.
Nature
|October 1, 2020
概括
研究人员开发了一种用于量子技术的新型石墨烯博洛米特. 这种高度灵敏的热传感器实现了纳秒时间常数和出色的能量分辨率,满足电路量子电动学应用的关键值.
科学领域:
- 量子技术
- 传感器的开发
- 材料科学
背景情况:
- 热传感器对于气体检测和安全等应用至关重要.
- 新兴的量子技术,特别是电路量子电力学,需要高度灵敏和快速的探测器.
- 现有的热传感器没有满足电路量子电动学的严格时间常数和能量分辨率要求.
研究的目的:
- 通过实验证明一个能够满足电路量子电力学值的玻洛米特.
- 开发具有几百纳秒时间常数和大约10个普朗克常数 (h) 的能量分辨率的热传感器.
- 用新材料提高玻利米表的性能.
主要方法:
- 使用具有极低比热的石墨烯单层作为博洛米特的活性材料.
- 在同一装置上直接测量噪声等效功率和热时间常数.
- 基于实验数据进行热量测量能量分辨率的描述.
主要成果:
- 在电路量子电力学值操作的博洛米特.
- 每平方根赫兹达到30泽普瓦特的噪声等效功率.
- 获得了500纳秒的热时间常数,比以前的限制缩短了两个数量级,最小观察时间常数为200纳秒.
- 确定了30个普朗克常数 (h) 的热量计能量分辨率.
结论:
- 开发的石墨烯波力计符合电路量子电力学应用的关键性能值.
- 传感器的快速响应时间和高能量分辨率使其能够与超导量子位和读取方案集成.
- 这种进步为增强量子计算和传感铺平了道路.
相关概念视频
The de Broglie Wavelength
32.2K
In the macroscopic world, objects that are large enough to be seen by the naked eye follow the rules of classical physics. A billiard ball moving on a table will behave like a particle; it will continue traveling in a straight line unless it collides with another ball, or it is acted on by some other force, such as friction. The ball has a well-defined position and velocity or well-defined momentum, p = mv, which is defined by mass m and velocity v at any given moment. This is the typical...
32.2K
Fermi Level Dynamics
528
The vacuum level denotes the energy threshold required for an electron to escape from a material surface. It is usually positioned above the conduction band of a semiconductor and acts as a benchmark for comparing electron energies within various materials.
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
528
Thomson's e/m Experiment
6.0K
In a beam of charged particles created by a heated cathode, the particles move at different speeds. However, many applications need a beam with uniform particle speeds. An arrangement known as a velocity selector uses electric and magnetic fields to pick particles with a particular speed from the beam.
A particle with charge q, speed v, and mass m enters an area from the top, where the magnetic and electric fields are perpendicular both to the particle's motion and to one another. The magnetic...
A particle with charge q, speed v, and mass m enters an area from the top, where the magnetic and electric fields are perpendicular both to the particle's motion and to one another. The magnetic...
6.0K
Fermi Level
1.3K
The Fermi-Dirac function is represented by an S-shaped curve indicating the probability of an energy state being occupied by an electron at a given temperature. The Fermi level is the energy level at which there is a fifty percent chance of finding an electron, and it is positioned between the lower-energy valence band and the higher-energy conduction band.
At absolute zero temperature, electrons fill all energy states up to the Fermi level, leaving upper states empty. As the temperature rises,...
At absolute zero temperature, electrons fill all energy states up to the Fermi level, leaving upper states empty. As the temperature rises,...
1.3K
Schottky Barrier Diode
768
Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
768
Bipolar Junction Transistor
1.2K
Bipolar Junction Transistors (BJTs) are essential elements in electronic circuits, playing a crucial role in the functionality of amplifiers, memories, and microprocessors. These transistors can be designed as NPN or PNP based on their doping patterns. They consist of three layers: the emitter, base, and collector. The configuration of these layers and their respective doping levels—with N-type or P-type impurities—define the transistor's type and its operational...
1.2K


