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在NIR-II窗口中具有增强光发光量的合金量子点

Hongchao Yang¹, Renfu Li², Yejun Zhang¹

¹CAS Key Laboratory of Nano-Bio Interface, Division of Nanobiomedicine and i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China.

Journal of the American Chemical Society

|February 5, 2021

概括

研究人员为第二个近红外窗口 (NIR-II) 开发了新的合金银金化物 (AgAuSe) 量子点 (QD). 这些QD显示了创纪录的光发光量子产量和寿命, 实现了先进的生物成像和光电子设备.

科学领域:

材料科学
纳米技术
光电子产品

背景情况:

半导体量子点 (QD) 在第二近红外窗 (NIR-II,900-1700 nm) 中发射,由于光子吸收和散射较低,对生物医学成像和NIR设备至关重要.
开发具有高光发光量子产量 (PLQY) 和生物相容性的NIR-II QD仍然是一个重大挑战.

研究的目的:

设计和合成新的合金银金化物 (AgAuSe) 量子点 (QD) 以提高NIR-II发射.
在没有有毒元素的NIR-II QD中实现高光发光量子产量 (PLQY) 和长寿命.
探索这些QD在生物成像,LED和光伏设备中的潜在应用.

主要方法:

合金银金化物 (AgAuSe) 量子点的合成
光发光 (PL) 排放的特征,PLQY和寿命.
研究高PLQY和长寿命的潜在机制,重点关注激素非辐射过渡抑制.

主要成果:

在NIR-II QD中,在978 nm的辐射下,达到820至1170 nm的明亮辐射,绝对PLQY为65.3%.
观察到长光寿命为4.58微秒.
证明高的PLQY和长寿命归因于非辐射过渡的抑制,这可能是由于离子空位减少和离子合金所促进的晶体缺陷.

结论:

开发的AgAuSe QD代表了NIR-II发射材料的重大进步,提供了高效率和长寿命.
这些无毒,无重金属的QD显示出各种应用的潜力,包括先进的生物成像和光电子设备,如LED和太阳能电池.

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