在半导体K2Bi8Se13的两倍带间差异下,无形到晶相变换记忆效应
Saiful M Islam1,2, Vinod K Sangwan3, D Bruce Buchholz3
1Department of Chemistry, Physics and Atmospheric Sciences, Jackson State University, Jackson, Mississippi 39217, United States.
研究人员开发了一种新的石化物质,K2Bi8Se13 (KBS),用于相变记忆 (PCM). 这种材料在无形和晶体状态之间显示了显著的光学和电气性质变化,使其成为下一代存储器的前景.
科学领域:
- 材料科学
- 固态物理
- 纳米技术
背景情况:
- 基于基因的相变存储器 (PCM) 对于光学数据存储和非挥发性电气存储至关重要.
- 开发具有增强性能的新材料对于推进PCM技术至关重要.
研究的目的:
- 介绍和描述一种新型的石化物材料,K2Bi8Se13 (KBS),用于相变记忆应用.
- 在垂直存储器架构中评估KBS的性能.
主要方法:
- 无形KBS的薄膜使用DC喷进行沉积.
- 分析了结构性,化学性,光学性和电气性.
- 在垂直记忆细胞中使用朱尔加热来研究相变行为.
主要成果:
- 无形KBS薄膜具有5nm的表面粗性.
- 在~483K时结晶,显示光学带隙的两倍差异 (1.25 eV无形与0.65 eV晶体).
- 电导率增加了约40倍 (从7.5×10−4到2.7×10−2 S/cm) 在转换从无形状态到晶体状态通过焦耳加热1-1.5V.
结论:
- KBS在无形和晶体状态之间显示了显著的电和光学对比.
- 它的成本效益,快速结晶动力学 (Tg/Tm ~ 0.5) 和可扩展的合成使KBS成为下一代相变记忆的有希望的材料.
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