在LaAlO3/KTaO3111) 接口上的超导电场控制
Zheng Chen1, Yuan Liu1, Hui Zhang2
1Interdisciplinary Center for Quantum Information, State Key Laboratory of Modern Optical Instrumentation, and Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University, Hangzhou 310027, China.
概括
研究人员使用门电压调整了LaAlO3/KTaO3接口的超导状态,观察了圆顶形的过渡温度依赖. 这种调整主要影响载体的移动性,而不是密度,这表明接口失调的变化.
科学领域:
- 凝聚物质物理学
- 材料科学
- 超导性
背景情况:
- 已知LaAlO3 (酸) 和KTaO3 (酸) 之间的氧化物接口具有超导状态.
- 对于新型设备应用,了解和控制氧化物接口的新兴电子特性至关重要.
研究的目的:
- 通过使用电场关门来研究LaAlO3/KTaO3的超导状态的可调性.
- 阐明门电压,载体特性以及超导和绝缘状态的出现之间的关系.
主要方法:
- 制造一个LaAlO3/KTaO3的异构结构.
- 在KTaO3基板上应用门电压 (VG) 来调节接口属性.
- 电传输测量 (电阻,载体密度,移动性) 作为温度和门电压的函数.
主要成果:
- 接口的超导性可以通过应用门电压来持续调整从超导到绝缘状态.
- 超导过渡温度 (Tc) 与门电压 (VG) 的形依赖性被观察到.
- 电门显著影响了载体的移动性,同时对载体密度有很小的影响,这表明接口乱发生了变化.
结论:
- 观察到的调整归因于载体的空间形状的变化和接口的实际混乱.
- 在超导和绝缘状态下低温的电阻和表明量子金属状态的存在.
- 这种量子金属状态可能与"超导体故障"或"脆弱绝缘体"的情况有关.
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