通过晶体形态工程和晶体大小控制,优化MOF中的储存
Kuthuru Suresh1, Darpandeep Aulakh1, Justin Purewal2
1Department of Chemistry, University of Michigan, 930 North University Avenue, Ann Arbor, Michigan 48109, United States.
Journal of the American Chemical Society
|July 9, 2021
概括
工程金属有机框架 (MOF) 通过增强粉末包装来改善储存. 这一战略提高了体积储存密度,超过了压缩系统的目标.
科学领域:
- 材料科学
- 化学工程
- 能量储存
背景情况:
- 金属有机框架 (MOF) 显示了储存的潜力.
- 不良的粉末包装限制了它们的容积密度.
- 实现理论储存容量需要解决包装效率低下的问题.
研究的目的:
- 提出一个提高MOF粉末包装效率的策略.
- 使用工程形态和受控晶体大小来增强体积气储存密度.
- 证明MOF的潜力可以超过当前的储备基准.
主要方法:
- 使用工程化晶体形态和受控的晶体大小分布.
- 该策略使用基准吸收剂MOF-5进行了证明.
- 使用系统模型预测来评估性能.
主要成果:
- 对于MOF-5来说,可以提高包装密度.
- 与商业MOF-5相比,观察到体积储性能显著提高.
- 预测显示可能超过25g/L和DOE 2020目标 (30g/L).
结论:
- 工程MOF晶体形态和尺寸分布是最大化存储容量的关键.
- 提高粉末包装密度与压缩过程中的损伤减少有关.
- 这种方法可以产生具有高表面积和高密度的MOF吸附剂,用于储存.
相关概念视频
01:25MOS Capacitor
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
01:22MOSFET: Enhancement Mode
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...