关于过渡金属化物的形成差距及其崩的观点
Hiroshi Mizoguchi1, Sang-Won Park1,2, Hideo Hosono1,2
1International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan.
Journal of the American Chemical Society
|July 21, 2021
概括
晚期过渡金属 (LTM) 很少形成化物. 由金属间负电离子影响的晶格软度是吸收的关键,使新材料的发展成为可能.
科学领域:
- 材料科学
- 化学学
- 物理
背景情况:
- 晚期过渡金属 (LTM) 在标准条件下通常不会形成化物,而 (Pd) 是一个显著的例外.
- (H) 存储金属间 (IM) 的形成,如LaNi5,涉及将低电子负性的金属与LTM结合起来.
研究的目的:
- 调查控制LTM的 (H) 吸收能力的关键性质.
- 确定格子软度作为LTM和H存储IM中的H插入的关键参数.
主要方法:
- 检查LTM的H吸收性能.
- 分析负电荷的LTM离子在化过程中的作用.
主要成果:
- 在 (Pd) 中的晶格软度被确定为促进H插入的独特参数.
- 发现负电荷的LTM离子,例如Ni-在LaNi5中,会诱导晶格的软化,使H溶液成为可能.
结论:
- 格子软化是LTM中吸收的一个关键因素.
- 晶格软度的概念可以指导新储存间金属的发展.
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