基于2D材料的同质晶体管内存架构用于神经形态硬件
Lei Tong1, Zhuiri Peng1, Runfeng Lin1
1Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China.
概括
这项研究引入了一种用于神经形态硬件的新二二酸装置,可使用同质组件进行集成模拟信号处理和记忆操作.
科学领域:
- 材料科学
- 电气工程
- 计算机科学
背景情况:
- 神经形态硬件通常使用分离的异质设备来进行外围电路和记忆.
- 在神经形态系统中,同质设备对于更好的整合和抗性匹配至关重要.
- 对二维材料的铁电近距离效应激发了新的设备架构.
研究的目的:
- 在神经形态硬件中开发一个用于集成模拟信号处理 (ASP) 和内存操作 (MO) 的同质设备.
- 展示一个级的二化酸架构,同时作为非线性晶体管和非挥发性存储器.
- 探索这种架构在二进制分类和三进制内容可定位内存中集成系统的潜力.
主要方法:
- 一个酸的烯化装置的制造.
- 用于ASP应用的设备的非线性晶体管特性.
- 对设备的非易失性内存特征进行MO功能评估.
- 对二进制分类和三进制内容可定位存储器设计的集成ASP-MO系统的研究.
主要成果:
- 基酸装置成功地作为ASP的非线性晶体管.
- 该设备具有非易失性存储器操作功能.
- 一个集成的ASP-MO系统被证明是二进制分类.
- 为神经形态应用提出了三元内容可定位的内存设计.
结论:
- 同质的化酸架构为集成的神经形态硬件提供了一个有前途的途径.
- 与异质系统相比,这种方法增强了模块集成和电阻匹配.
- 开发的设备和系统为更高效,更紧的神经形态计算解决方案铺平了道路.
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