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Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices
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半导体超级电网中的连续Mott过渡

Tingxin Li1, Shengwei Jiang2, Lizhong Li1

  • 1School of Applied and Engineering Physics, Cornell University, Ithaca, NY, USA.

Nature
|September 16, 2021
PubMed
概括

研究人员观察到半导体moiré材料中的连续金属绝缘体过渡. 这种由电子相互作用驱动的过渡揭示了量子关键性和对Mott绝缘体附近物质异常状态的洞察力.

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