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Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
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允许无相分离的基本电开关

Jiabin Shen1,2, Shujing Jia1,2, Nannan Shi3

  • 1State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 200050 Shanghai, China.

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|December 9, 2021
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概括
此摘要是机器生成的。

研究人员开发了一种新的单元 (Te) 挥发性开关,用于先进的记忆芯片. 这种开关提供了高电流密度和快速开关速度,简化了未来高密度非挥发性存储器件的材料.

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科学领域:

  • 材料科学
  • 电气工程
  • 固态物理

背景情况:

  • 非挥发性相变存储器的商业化面临着低于10纳米的密度扩展挑战.
  • 电流选择器开关,通常是Ovonic值开关 (OTS),依赖于复杂的素化合物.
  • OTS中的化学复杂性阻碍了高级记忆的同质材料的开发.

研究的目的:

  • 为高密度内存应用引入简化的单元挥发式开关.
  • 为了克服当前无形基值开关 (OTS) 的材料复杂性限制.
  • 为了展示下一代内存设备的新型切换机制.

主要方法:

  • 一个单元 (Te) 挥发性开关的制造和表征.
  • 电气测量以确定电流密度,启/关比和开关速度.
  • 分析涉及肖特基屏障和液晶过渡的切换机制.

主要成果:

  • 使用单元Te开关实现了较大的驱动电流密度 (≥11MA/cm2).
  • 显示了大约103的高开/关电流比,切换速度快于20ns.
  • 在Te电极接口发现了~0.95 eV的Schottky屏障,导致了低OFF电流.
  • 在纯Te中观察到电压脉冲诱导的液晶融化过渡,使高ON电流成为可能.

结论:

  • 一个单元 (Te) 挥发性开关提供了一个有希望的替代复杂的化物开关.
  • 这种开关具有出色的电性能,包括高电流密度和快速开关.
  • 这一发现简化了材料要求,并可能实现更密集的内存芯片集成.