允许无相分离的基本电开关
Jiabin Shen1,2, Shujing Jia1,2, Nannan Shi3
1State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 200050 Shanghai, China.
概括
研究人员开发了一种新的单元 (Te) 挥发性开关,用于先进的记忆芯片. 这种开关提供了高电流密度和快速开关速度,简化了未来高密度非挥发性存储器件的材料.
科学领域:
- 材料科学
- 电气工程
- 固态物理
背景情况:
- 非挥发性相变存储器的商业化面临着低于10纳米的密度扩展挑战.
- 电流选择器开关,通常是Ovonic值开关 (OTS),依赖于复杂的素化合物.
- OTS中的化学复杂性阻碍了高级记忆的同质材料的开发.
研究的目的:
- 为高密度内存应用引入简化的单元挥发式开关.
- 为了克服当前无形基值开关 (OTS) 的材料复杂性限制.
- 为了展示下一代内存设备的新型切换机制.
主要方法:
- 一个单元 (Te) 挥发性开关的制造和表征.
- 电气测量以确定电流密度,启/关比和开关速度.
- 分析涉及肖特基屏障和液晶过渡的切换机制.
主要成果:
- 使用单元Te开关实现了较大的驱动电流密度 (≥11MA/cm2).
- 显示了大约103的高开/关电流比,切换速度快于20ns.
- 在Te电极接口发现了~0.95 eV的Schottky屏障,导致了低OFF电流.
- 在纯Te中观察到电压脉冲诱导的液晶融化过渡,使高ON电流成为可能.
结论:
- 一个单元 (Te) 挥发性开关提供了一个有希望的替代复杂的化物开关.
- 这种开关具有出色的电性能,包括高电流密度和快速开关.
- 这一发现简化了材料要求,并可能实现更密集的内存芯片集成.
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