从Ab Initio分子动力学的MgO-水界面电子转移的途径
Zhutian Ding1, Zachary K Goldsmith1, Annabella Selloni1
1Department of Chemistry, Princeton University, Princeton, New Jersey 08544, United States.
Journal of the American Chemical Society
|January 21, 2022
概括
在MgO-水界面上的多余电子定位为中间缺陷状态. 电子转移主要形成表面定位的电子,而不是基,解释MgO
科学领域:
- 表面科学
- 计算化学
- 材料科学
背景情况:
- 在金属氧化物-水接口的电子转移对于催化和放射溶解至关重要.
- 氧化 (MgO) 是一种带宽隙氧化物,具有潜在的应用.
研究的目的:
- 调查MgO-水界面上的电子转移动态.
- 描述介面电子定位和反应路径.
主要方法:
- 使用混合密度功能理论的初始分子动力学模拟.
- 分析基于马库斯的理论.
主要成果:
- 在MgO中过剩的电子局部化到中间缺陷状态,类似于水合电子.
- 观察到两个电子转移产物:表面定位的电子 (esurf-) 和水性基 (H•).
- esurf-是由于较低的激活屏障而产生的动力产物.
结论:
- 运动产物esurf-解释了MgO在水放射解中的有限效用.
- 该计算框架适用于其他水性,光催化接口.
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