垂直的MoS2晶体管,其门长度为亚-1nm
Fan Wu1,2, He Tian3,4, Yang Shen1,2
1School of Integrated Circuits, Tsinghua University, Beijing, China.
Nature
|March 10, 2022
概括
研究人员使用二硫化 (MoS2) 和石墨烯开发了超大尺度的晶体管,其门长度低于1纳米. 这一突破推动了电子设备的小型化,
科学领域:
- 材料科学
- 纳米技术
- 固态物理
背景情况:
- 超级晶体管对于下一代电子设备至关重要.
- 使用二硫化物 (MoS2) 等原子薄材料制造1纳米以下门长的晶体管仍然是一个重大挑战.
研究的目的:
- 为了展示边壁MoS2晶体管,其门长度低于1nm.
- 用石墨烯的边缘作为超级晶体管的门电极.
主要方法:
- 使用化学蒸汽沉积培养的大面积石墨烯和MoS2薄膜制造侧壁MoS2晶体管.
- 这些材料在2英寸晶圆上集成,用于可扩展的设备生产.
主要成果:
- 具有原子薄通道和物理门长度低于1 nm的侧壁MoS2晶体管.
- 实现了高开/关比 (高达1.02×10^5) 和低下值 (低至117mV dec^-1).
- 模拟显示有效通道长度接近0.34nm (启动状态) 和4.54nm (关闭状态).
结论:
- 这种新的方法可以为未来的电子设备创造超级晶体管.
- 展示的技术可以大大促进晶体管的持续扩展,并有可能扩展摩尔定律.
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