矿纳米晶体缺陷耐受性的极限:局部静电电位对陷状态的影响
Indy du Fossé1, Jence T Mulder1, Guilherme Almeida1
1Optoelectronic Materials Section, Faculty of Applied Sciences, Delft University of Technology, Van der Maasweg 9, 2629 HZ Delft, The Netherlands.
Journal of the American Chemical Society
|June 29, 2022
概括
化纳米晶体 (NCs) 具有缺陷耐受性,但表面Br- 离子可以创建深陷. 局部静电电位解释了这些陷,它们可以被特定的离子消极化.
科学领域:
- 材料科学
- 固态物理
- 量子化学
背景情况:
- 烯化纳米晶体 (NCs) 以其耐缺陷性而闻名.
- 低协调的离子通常被认为在带边附近形成浅陷.
- 已观察到表面悬浮的纽带会产生深陷状态.
研究的目的:
- 挑战传统的对矿的缺陷耐受性的理解.
- 为了解释表面 Br- ion 引起的深陷状态.
- 提出矿NC深层陷的消极化策略.
主要方法:
- 密度函数理论 (DFT) 的计算.
- 在表面 Br- 位点分析局部静电电位.
- 研究离子被动化策略.
主要成果:
- 表面的 Br-点会产生不稳定的静电电位, 将悬浮的轨道推入带隙.
- 这些深陷可以通过特定的离子静电被动化.
- 通过离子相互作用而没有共价表面结合而发生被动化.
结论:
- 对于矿NC中缺陷耐受性的传统观点是不完整的.
- 当地环境和静电潜力对于深层陷的形成至关重要.
- 离子被动化提供了一种可行的策略来消除带隙中的深陷.
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