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Updated: Sep 3, 2025

Atomically Defined Templates for Epitaxial Growth of Complex Oxide Thin Films
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对称断裂诱导的半金属状态:鲁酸纳米板中的多态性

Kazutaka Sonobe1, Satoshi Tominaka1, Wataru Sugimoto2

  • 1International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan.

Journal of the American Chemical Society
|July 25, 2022
PubMed
概括

在鲁酸纳米板中的对称性破裂会产生半金属状态,类似于石墨烯. 这一发现强调了对称性分析在理解低维纳米材料方面的关键作用.

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Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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