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用于二维过渡金属二基因的P型电接触器

Yan Wang¹, Jong Chan Kim², Yang Li¹

¹Department of Materials Science and Metallurgy, University of Cambridge, Cambridge, UK.

|August 1, 2022

概括

研究人员使用二维 (2D) 过渡金属二基因化物 (TMD) 开发了高性能p型场效应晶体管 (FET). 这一突破使得先进的电子设备能够克服二维材料的挑战.

科学领域:

材料科学
凝聚物质物理学
纳米技术

背景情况:

数字逻辑电路依赖于使用n型和p型场效应晶体管 (FET) 的互补金属氧化物半导体 (CMOS) 技术.
在低维半导体,特别是二维 (2D) 过渡金属二甲基化物 (TMD) 中实现可控的p型兴奋剂仍然是一个重大挑战.
现有的方法在2DTMD上使用高功能的金属来制造有效的p型设备,尽管n型接触器取得了成功.

研究的目的:

在二维过渡金属二基因上开发高性能p型场效应晶体管 (FET).
调查2DTMD和高功能的金属之间的接口特性,用于p型设备的制造.
展示这些p型TMD设备在电子和光电子应用中的潜力.

主要方法:

工业兼容的电子束蒸发高功能的金属 (和) 到单层和少层二硫化物和二硫化物.
分析范德瓦尔斯 (vdW) 接口的原子分辨率成像和光谱.
电子运输测量以描述设备的性能,包括接触电阻,移动性和开/关比.

主要成果:

在2DTMD上制造的高性能p型FET,具有近乎理想的vdW接口,没有化学相互作用.
证明接触电阻低 (3.3 kΩ·μm),可移动性高 (~190 cm2/V·s),并具有优异的启/关比 (107).
成功制造了一种超薄的光伏电池,具有0.6V的开放电路电压和0.82%的功率转换效率.

结论:

在2DTM中,使用特定的金属接触和制造技术可以实现可控的p型注和高性能装置.
开发的VDW接口为推进二维电子和光电子提供了有前途的途径.
这项工作克服了在实现下一代电子应用中2D材料的全部潜力的关键障碍.

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