Jove
Visualize
联系我们
JoVE
x logofacebook logolinkedin logoyoutube logo
关于 JoVE
概览领导团队博客JoVE 帮助中心
作者
出版流程编辑委员会范围与政策同行评审常见问题投稿
图书馆员
用户评价订阅访问资源图书馆顾问委员会常见问题
研究
JoVE JournalMethods CollectionsJoVE Encyclopedia of Experiments存档
教育
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab Manual教师资源中心教师网站
使用条款与条件
隐私政策
政策

相关概念视频

Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

316
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
316
Biasing of FET01:22

Biasing of FET

348
Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
348

您也可能阅读

相关文章

通过共同作者、期刊和引用图与本文相关的文章。

排序
Same author

Two-Photon Absorption of Quadrupolar Dyes: Performance of Density Functional Approximations.

Journal of chemical theory and computation·2026
Same author

Inverse Design of Anthraquinone-Mimicking COFs via Electronic Fingerprints for Sacrificial-Agent-Free Photocatalytic H<sub>2</sub>O<sub>2</sub> Production under Visible Light.

Journal of the American Chemical Society·2026
Same author

Theoretical Perspectives of Precision Chemistry.

Precision chemistry·2026
Same author

KSSOLV Toolbox: A MATLAB Graphical User Interface for Plane-Wave Density Functional Theory Calculations.

Journal of chemical theory and computation·2026
Same author

Perturbative Coordinate Descent Full Configuration Interaction.

Journal of chemical theory and computation·2026
Same author

Linkage-Locking Cyclization Enables Hydrolysis-Resistant Imine COFs for Photocatalytic Water Splitting.

The journal of physical chemistry letters·2026

相关实验视频

Updated: Aug 25, 2025

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

9.7K

2D铁电Rashba半导体的高通量反向设计

Jiajia Chen1, Kai Wu1, Wei Hu1

  • 1Department of Chemical Physics, Hefei National Research Center for Physical Sciences at the Microscale, Synergetic Innovation Center of Quantum Information and Quantum Physics, Anhui Center for Applied Mathematics, and School of Data Science, University of Science and Technology of China, Hefei, Anhui230026, China.

Journal of the American Chemical Society
|October 17, 2022
PubMed
概括

研究人员发现了新的2D铁电Rashba半导体. 这些材料允许电场控制旋转纹理,为先进的电子设备铺平了道路.

更多相关视频

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
10:40

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

Published on: April 8, 2018

8.3K
In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

4.1K

相关实验视频

Last Updated: Aug 25, 2025

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

9.7K
A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
10:40

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

Published on: April 8, 2018

8.3K
In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

4.1K

科学领域:

  • 凝聚物质物理学
  • 材料科学
  • 机器人

背景情况:

  • 实现旋转的电气控制是旋转电子学的一个关键挑战.
  • 铁电Rashba半导体提供了电气操纵自旋纹理的潜力.

研究的目的:

  • 使用反向设计识别新的二维 (2D) 铁电Rashba半导体.
  • 探索用于自旋电子应用的可电切换自旋纹理的材料.

主要方法:

  • 反向设计方法包含Rashba效应和铁电的原则.
  • 材料数据库的选和高通量密度的功能理论计算.
  • 识别出A2P2X6,ABP2X6和AB晶体结构表现出两种现象.

主要成果:

  • 确定了14种有前途的AB单层材料作为二维铁电Rashba半导体.
  • 这些材料在导电带最小时表现出纯粹的Rashba效应.
  • 已证明可以克服的铁电极化的能量障碍,使电转换成为可能.

结论:

  • 发现的二维铁电拉什巴半导体具有理想的自旋电子特性.
  • 可实现电可逆自旋纹理,使其适用于下一代自旋电子设备.