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Updated: Aug 23, 2025

Enhanced Electron Injection and Exciton Confinement for Pure Blue Quantum-Dot Light-Emitting Diodes by Introducing Partially Oxidized Aluminum Cathode
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Enhanced Electron Injection and Exciton Confinement for Pure Blue Quantum-Dot Light-Emitting Diodes by Introducing Partially Oxidized Aluminum Cathode

Published on: May 31, 2018

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通过对接分子的定向来实现高效的InP量子点发光二极管

Seungjin Lee1, So Min Park1, Eui Dae Jung1,2

  • 1Department of Electrical and Computer Engineering, University of Toronto, 35 St George Street, Toronto, Ontario M5S 1A4, Canada.

Journal of the American Chemical Society
|November 3, 2022
PubMed
概括

这项研究通过调整无机孔注射层来增强化物量子点发光二极管 (QLED). 在氧化层中优化分子导向, 实现了创纪录的18.8%的外部量子效率,

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Synthesis of In37P20O2CR51 Clusters and Their Conversion to InP Quantum Dots08:21

Synthesis of In37P20O2CR51 Clusters and Their Conversion to InP Quantum Dots

Published on: May 7, 2019

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Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection12:57

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection

Published on: October 13, 2017

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相关概念视频

Biasing of P-N Junction01:16

Biasing of P-N Junction

The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
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