在压力下化物双矿的调节缺陷
Nathan R Wolf1, Adam Jaffe1, Adam H Slavney1
1Department of Chemistry, Stanford University, Stanford, California94305, United States.
通过调整空缺缺陷,高压极大地改变了化矿的导电性. 这种从浅到深缺陷状态的过渡会影响这些半导体中的电子传输.
科学领域:
- 材料科学
- 固态物理
- 半导体物理
背景情况:
- 补充剂缺陷通过捕获或产生电荷载体对半导体电子传输产生重大影响.
- 化是技术上重要的半导体,以其可观的压力反应而闻名.
- 高压对化矿内部缺陷的影响尚未经过实验.
研究的目的:
- 研究高压对小带隙双矿Cs2AgTlX6 (X=Cl或Br) 的结构,光学和电子影响.
- 确定压力诱导的缺陷调节在这些材料观察到的光电子行为中的作用.
主要方法:
- 压缩Cs2AgTlX6 (X=Cl或Br) 单晶至56GPa.
- 在不同压力下测量结构,光学和电子性能.
- 对轨道相互作用进行分析以了解缺陷行为.
主要成果:
- 轻度压缩 (1.7 GPa) 增加了Cs2AgTlBr6导电量,并减少了其带隙 (0.94到0.7 eV).
- 在更高的压力下观察到复杂的光电子行为,带隙变化为1.2 eV,导电性变化高达10^4.
- 导电性变化与压力诱导的空缺陷从浅到近1.5GPa的深度状态的过渡相关.
结论:
- 压力诱导的空缺陷调整显著改变化的导电性,独立于带隙变化.
- 从浅到深的缺陷转变是由Tls-Brp抗结合相互作用的压力减弱驱动的.
- 在化物双矿中,化物空隙很可能是浅层的供体,具有s轨道导电带.
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