在压力下的近一维HfS3中从绝缘体转变为超导体
Binbin Yue1, Wei Zhong1, Wen Deng1
1Center for High Pressure Science & Technology Advanced Research, 10 East Xibeiwang Road, Haidian, Beijing 100094, China.
Journal of the American Chemical Society
|December 29, 2022
概括
在绝缘三硫化 (HfS3) 化合物中通过施加高压来诱导超导. 这一发现表明所有过渡金属三化物 (TMTC) 可能表现出超导性.
科学领域:
- 凝聚物质物理学
- 材料科学
- 固态化学
背景情况:
- 过渡金属三化物 (TMTC) 具有多种电子性质,包括金属绝缘体过渡,拓绝缘和超导.
- 虽然许多金属TMTC是超导体,但大多数TMTC是半导体或绝缘体,因此这些非金属化合物的超导性潜力尚未被探索.
研究的目的:
- 通过人工操纵来研究非金属过渡金属三化物是否可以诱导超导.
- 在高压下探索绝缘三硫化 (HfS3) 的电子和结构行为.
主要方法:
- 对三硫化 (HfS3) 水晶施加静水压力.
- 使用光学吸收,拉曼光谱和X射线衍射来分析结构和电子变化.
- 测量电阻以检测超导过渡.
主要成果:
- HfS3经历了大约17GPa的绝缘体到半导体的过渡,伴随着显著的频段间隙缩小.
- 在50. 6GPa时观察到HfS3的超导性,在121GPa时临界温度 (Tc) 达到8. 1K.
- 观察到的电子转型归因于结构变化,高Tc为TMTC创造了新纪录.
结论:
- 人工操纵,特别是高压,可以诱导像HfS3这样的TMTC绝缘.
- 这一发现扩大了TMTC家族中的潜在超导体范围.
- 这项研究为探索TMTC材料中的新现象开辟了新的途径.
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