完全抗铁磁道交叉点的室温磁阻
Peixin Qin1, Han Yan1, Xiaoning Wang1
1School of Materials Science and Engineering, Beihang University, Beijing, China.
Nature
|January 18, 2023
概括
研究人员使用新的交换偏差效应开发了室温反铁磁道连接. 这些设备具有很大的磁阻力,为下一代超快的存储技术铺平了道路.
科学领域:
- 凝聚物质物理学
- 材料科学
- 信息技术
背景情况:
- 抗铁磁自旋技术为高密度,超快速的信息设备提供了潜力.
- 由于室温低的电力输出阻碍了实际应用.
研究的目的:
- 调查对线性 (MnPt) 和非线性 (Mn3Pt) 反铁磁体之间的室温交换偏差效应.
- 开发具有增强磁阻力的全抗铁磁道连接.
主要方法:
- 在MnPt和Mn3Pt之间利用了奇特的交换偏差效应.
- 制造的全反铁磁道连接点.
- 进行了原子旋转动力学模拟和第一原理计算.
主要成果:
- 在MnPt和Mn3Pt之间实现了室温交换偏差效应.
- 在道连接处证明了高达100%的非挥发性室温磁电阻.
- 确定了MnPt中的未补偿接口旋转作为交换偏差的来源.
- 确定Mn3Pt的动量空间中的自旋极化作为磁阻的起源.
结论:
- 开发的全抗铁磁道连接显示了显著的室温磁阻力.
- 这些设备几乎消失了迷路场和特拉赫兹级旋转动力.
- 潜在的下一代高度集成和超快的内存设备.
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