在反铁磁道连接处的八极驱动磁阻
Xianzhe Chen1,2, Tomoya Higo1,2,3, Katsuhiro Tanaka4
1Department of Physics, University of Tokyo, Tokyo, Japan.
Nature
|January 18, 2023
概括
研究人员在完全抗铁磁道交叉点观察到显著的道磁阻力 (TMR). 这一突破利用了性反铁磁体, 铺平了先进的自旋电子设备的道路.
科学领域:
- 机器人
- 凝聚物质物理学
- 材料科学
背景情况:
- 道磁阻 (TMR) 对于自旋电子设备至关重要,通常用于铁磁铁.
- TMR取决于磁结 (MTJ) 中铁磁电极的相对磁化.
研究的目的:
- 在完全抗铁磁道交叉点 (Mn3Sn/MgO/Mn3Sn) 中检测TMR.
- 探索反铁磁材料在自旋应用中的潜力.
主要方法:
- 制造和测量Mn3Sn/MgO/Mn3Sn和Fe/MgO/Mn3Sn磁道连接点
- 对TMR比率和自旋极化电流的实验性描述.
- 在奇拉抗铁磁体中对TMR机制的理论分析.
主要成果:
- 在全抗铁磁MTJ中观察室温的TMR比率约为2%.
- 通过操纵八极方位来控制异型纵向自旋极化电流方向.
- 测量的TMR比率明显超过基于观察到的旋转偏振的理论估计.
结论:
- 由于独特的极化特征,状抗铁磁MTJ可以表现出大量TMR.
- 这项研究为开发使用反铁磁铁的超快速和高效的旋转器件奠定了基础.
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