集成与表轴高k门氧化物的二维场效应晶体管
Congwei Tan1, Mengshi Yu1, Junchuan Tang1
1Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, China.
Nature
|March 23, 2023
概括
研究人员使用二维半导体和高k门氧化物开发了新的3D垂直晶体管. 这些表轴异构结构实现了高性能,使未来的超级电子能够扩展摩尔定律.
科学领域:
- 材料科学
- 纳米技术
- 半导体物理
背景情况:
- 将2D半导体和高k门氧化物集成到3D垂直架构对于超级晶体管至关重要,但面临重大挑战.
- 现有的方法难以实现下一代设备所需的关键尺寸的精确整合和控制.
研究的目的:
- 使用2D半导体和高k门氧化物报告新型3D垂直架构的表轴合成.
- 展示这些结构的制造和特征,用于高级晶体管应用.
主要方法:
- 垂直对齐的2D氧化物异构结构阵列的表轴合成,具体集成Bi2O2Se (2D半导体) 和Bi2SeO5 (高k氧化物).
- 实现了原子平面和超薄翅膀厚度到一个单元细胞 (1.2 nm).
- 基于合成的异构结构制造的二维场效应晶体管 (FinFET).
主要成果:
- 展示了单向阵列的晶圆规模,特定位置和高密度增长.
- 达到高电子流动性 (μ) 达到270cm2V-1s-1.
- 报告的超低离位电流 (I_OFF) ~1 pA μm−1,高开/关电流比 (I_ON/I_OFF) 高达108,高开电流 (I_ON) 高达830 μA μm−1 在400 nm的通道长度.
- 性能指标符合国际设备和系统路线图 (IRDS) 所规定的低功耗规格.
结论:
- 开发的二维氧化物表轴异构结构代表了一个新的三维架构类别.
- 这些发现为通过超级晶体管开发进一步扩展摩尔定律开辟了新的途径.
- 在垂直阵列中精确集成二维材料和高k介电材料是未来电子设备的可行策略.
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