用于记忆应用的混合2D-CMOS微芯片
Kaichen Zhu1, Sebastian Pazos1, Fernando Aguirre1
1Materials Science and Engineering Program, Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, Saudi Arabia.
Nature
|March 27, 2023
概括
这项研究使用六角化制造高密度的2D-CMOS混合微芯片,用于先进的记忆应用. 这些新设备能够实现内存计算和高耐久度的神经网络.
科学领域:
- 材料科学
- 电气工程
- 纳米技术
背景情况:
- 先进的电子电路依赖于二维 (2D) 材料,但整合的挑战限制了设备的密度和功能.
- 之前的研究主要集中在大型,孤立的二维设备上,由于产量低和可变性,阻碍了实际应用.
- 上的单层二维材料面临着诸如针孔和裂等挑战,限制了整合密度和计算演示.
研究的目的:
- 开发高集成密度的2D-CMOS混合微芯片用于记忆应用.
- 克服以前的二维材料整合方法的局限性.
- 展示这些混合芯片在内存计算和神经形态应用中的潜力.
主要方法:
- 通过将多层六角化物转移到带有180nmCMOS晶体管的微芯片上来制造2D-CMOS混合微芯片.
- 集成CMOS晶体管用于精确的电流控制在六角化物memristors.
- 顶部电极和相互连接的模式,以完成混合电路.
主要成果:
- 实现高集成密度的2D记忆器到0.053μm2的耐用性大约500万个周期.
- 通过构建逻辑门来证明内存计算.
- 测量了依赖于尖端时间的可塑性信号,适合尖端神经网络.
结论:
- 开发的2D-CMOS混合微芯片提供了高性能和高技术准备水平.
- 这项工作代表了将二维材料集成到微电子产品和记忆设备中的重大进步.
- 这项技术可以实现实用内存计算,并为未来的神经形态硬件铺平道路.
相关概念视频
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Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
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