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在CMOS上集成的数千个导电率级别
Mingyi Rao1,2, Hao Tang3, Jiangbin Wu4
1TetraMem, Fremont, CA, USA.
Nature
|March 29, 2023
概括
这项研究展示了具有2048个不同的导电量级别的memristors,对于边缘计算中的高精度神经网络至关重要. 这一突破通过直接编程突触权重, 实现了更高效,更准确的AI应用.
科学领域:
- 材料科学与工程
- 电气工程
- 计算机科学 (人工智能和机器学习)
背景情况:
- 记忆设备为机器学习和人工智能提供了更好的吞吐量和能源效率,特别是在边缘应用中.
- 从头开始训练神经网络模型是资源密集型的,使预训练重量编程成为分布式记忆器是边缘人工智能的实用方法.
- 对于大型神经网络应用中的memristor来说,具有众多可区分的电导度级别的高精度可编程性至关重要.
研究的目的:
- 在精确的神经网络应用的记忆设备中实现大量可区分的导电量.
- 识别和克服阻碍memristors实现多重导电状态的物理限制.
- 开发用于商业边缘人工智能应用的高精度memristor的操作协议.
主要方法:
- 使用商业造厂在补充金属氧化物半导体 (CMOS) 电路上单体集成的256x256记忆器阵列的制造.
- 确定限制电导率水平的基础物理,并开发绕过这些限制的电操作协议.
- 记忆器性能的表征,包括超过一百万个循环的耐用性和编程导电水平的精度.
主要成果:
- 在单独的memristor中达到2,048个可辨别的导电率,读数始终在目标导电率的1μS范围内.
- 展示了将256x256的memristor阵列编程成64个不同电导度的区块的能力.
- 证实了高耐久性和强度的记忆装置,超过一百万个切换周期.
结论:
- 这项研究通过基本物理理解和新的操作协议成功实现了具有前所未有的导电量水平的高精度记忆器.
- 这些高精度的memristors适用于神经网络突触权重的直接编程,为先进的边缘AI应用商业化铺平了道路.
- 这些发现为记忆交换机制提供了重要的见解,并为开发神经形态计算和其他应用的先进记忆设备提供了途径.
相关概念视频
01:25MOS Capacitor
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A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
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01:22MOSFET: Enhancement Mode
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Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
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01:17Characteristics of MOSFET
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Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
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01:16MOSFET
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The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
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01:24Metal-Semiconductor Junctions
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The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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01:20MOSFET: Depletion Mode
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Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
423