具有高门介电性能的二维稀土氧化物的一般方法
Biao Zhang1,2, Yuchen Zhu3, Yi Zeng1,2
1School of Materials Science and Engineering, Peking University, Beijing 100871, China.
Journal of the American Chemical Society
|May 9, 2023
概括
研究人员开发了一种一般的盐方法,以创建二维 (2D) 稀土氧化物 (REOX) 纳米片和异构结构. 这种进步使得高性能电子设备成为可能,例如使用LaOCl门介电体的MoS2晶体管.
科学领域:
- 材料科学
- 纳米技术
- 固态化学
背景情况:
- 二维 (2D) 稀土氧化物 (REOX) 具有用于先进应用的独特特性.
- 制造二维REOX和异构结构对于探索其潜力至关重要,但仍然具有挑战性.
- 需要一种简单的2D REOX合成方法.
研究的目的:
- 开发合成二维稀土氧化物 (REOX) 纳米片的一般策略.
- 研究这些二维材料的生长机制.
- 展示2D REOX在高性能电子设备中的应用.
主要方法:
- 由基质辅助的盐合成.
- 合成的2DLnOCl (兰化氧化物) 纳米片的表征.
- 使用LaOCl作为门介电器的MoS2场效应晶体管的制造和测试.
主要成果:
- 使用易溶盐方法成功制备了2D LnOCl纳米片 (Ln = La, Pr, Nd, Sm, Eu, Gd, Tb, Dy).
- 提出了一种涉及准层结构和基板相互作用的侧向生长的双驱动机制.
- 侧向异构结构和超的表层生长.
- 使用LaOCl门介电器实现了高性能MoS2晶体管,其启/关比高达10^7和下值波动为77.1 mV dec^-1.
结论:
- 开发的盐策略为合成各种二维REOX纳米片和异构结构提供了一种一般方法.
- 这些发现为二维REOX增长机制提供了更深入的理解.
- 这项工作突显了二维REOX在未来电子设备中的巨大潜力.
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