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在染料敏感的NiO光电极中通过电子的侧向转移进行电荷重组减速

Chen Ye¹, Haoliang Cheng¹, Sina Wrede¹

¹Department of Chemistry-Ångström Laboratories, Uppsala University, Uppsala SE75120, Sweden.

Journal of the American Chemical Society

|May 16, 2023

概括

在染料敏感的太阳能电池中,侧向电子跳跃可以减少电荷重组. 这项研究表明跳跃减缓了重组,通过空间分离电子和洞来增强p型细胞的性能.

科学领域:

材料科学
电化学
太阳能发电

背景情况:

电荷分离和重组动力学对于染料敏感太阳能电池 (DSSC) 和光电化学电池至关重要.
在p型DSSC中,充电重组显著限制了光伏性能.

研究的目的:

通过促进电子和孔的空间分离,研究 p 型半导体表面上染料之间的横向电子跳跃可以提高细胞性能的假设.
提供电子跳跃对电荷重组动力的间接证据.

主要方法:

使用氧化物 (NiO) 薄膜,经过烯胺 (PMI) 和二胺 (NDI) 染料的敏感化.
使用超快光谱来监测孔注入动态和表面电子转移.
在使用PMI和NDI的共感膜中研究了电荷重组动力学.

主要成果:

从激发的PMI* (τ < 200 fs) 和NDI* (τ = 1.2 ps) 中观察到超快的孔注入NiO.
在共敏感膜中,从PMI−到NDI的快速表面电子转移发生在24秒内.
与直接的NDI激发相比,当NDI-通过PMI-电子转移生成时,与NiO孔的电荷重组速度显著较慢 (ps-μs).

结论:

实验结果支持这样一个假设:p型半导体表面上的染料分子之间横向的电子跳跃有效地延迟了电荷重组.
在从PMI跳到NDI位置后观察到的更慢的重组表明电荷分离的增强.
这项研究为染料敏感的NiO光电极系统的电荷载体动力学提供了关键的见解,这对提高DSSC性能具有重要意义.

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