Zr/Nb-

Leonid Svyatkin1, Daria Terenteva1, Roman Laptev1

  • 1Division for Experimental Physics, National Research Tomsk Polytechnic University, 634050 Tomsk, Russia.

概括

在Zr/Nb接口的前两个Zr层中形成杂质和空复合物,增加电子密度缺陷. 在Nb层中的空隙可以通过吸引Zr原子来自我修复.

相关概念视频

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