在Zr/Nb接口的-空隙复合体形成的特点
Leonid Svyatkin1, Daria Terenteva1, Roman Laptev1
1Division for Experimental Physics, National Research Tomsk Polytechnic University, 634050 Tomsk, Russia.
Materials (Basel, Switzerland)
|May 27, 2023
概括
在Zr/Nb接口的前两个Zr层中形成杂质和空复合物,增加电子密度缺陷. 在Nb层中的空隙可以通过吸引Zr原子来自我修复.
科学领域:
- 材料科学 材料科学 材料科学
- 计算材料科学科学 计算材料科学
- 表面科学是一门学科.
背景情况:
- 了解接口对于材料性能至关重要.
- 杂质可以降低材料的性能.
- 接口上的原子相互作用会影响缺陷行为.
研究的目的:
- 在Zr/Nb界面研究原子结构和电子密度.
- 确定杂质和空缺复合物的影响.
- 分析缺陷形成能量和首选位置.
主要方法:
- 第一原则研究.第一原则研究.
- 优化的范德比尔特伪潜力方法.
- 计算Zr-Nb-He系统的形成能量.
主要成果:
- 原子和复合物最好在接口的前两个Zr层中形成.
- 这增加了第一个Zr层中减少电子密度的区域.
- 空复合物减少了更深层Zr/Nb层和大部分电子密度缺陷.
- 第一个Nb层中的空隙吸引Zr原子,潜在的自我修复缺陷.
结论:
- 在Zr/Nb接口的杂物定位得到证实.
- ,空位和接口之间的相互作用改变了电子密度分布.
- 确定了NB方面空缺职位的潜在自我修复机制.
关键词:
密度函数理论密度函数理论,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,纳米级的多层涂层.在空缺的职位上./接口的界面是/.更多相关视频
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