铁电门式石墨烯场效应晶体管的曲稳定性用于灵活的电子产品
Guangliang Hu1, Yinchang Shen1, Lvkang Shen1
1School of Microelectronics, Xi'an Jiaotong University, Xi'an 710049, China.
Materials (Basel, Switzerland)
|May 27, 2023
概括
灵活的石墨烯场效应晶体管 (GFET) 使用兰酸酸 (PLZT ((8/30/70)) 铁电门在曲下显示稳定的迪拉克电压. 这种稳定性来自于对立的柔电和压电两极化效应,增强了灵活电子的潜力.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 纳米技术 纳米技术
背景情况:
- 灵活的电子设备需要在机械应变下具有稳定的设备特性.
- 铁电材料为先进的晶体管应用提供可调节的电特性.
- 石墨烯场效应晶体管 (GFET) 是下一代灵活设备的前景.
研究的目的:
- 为了研究在PLZT ((8/30/70) 曲下封闭的GFET中迪拉克电压 (V_Dirac) 的稳定性.
- 为了分析PLZT ((8/30/70) 门在变形下的两极化机制.
- 评估PLZT ((8/30/70) 在灵活的GFET应用中的潜力.
主要方法:
- 使用PLZT ((8/30/70) 铁电门制造GFET.
- 对灵活的GFET设备应用受控曲变形.
- 在应力下分析V_Dirac转移和极化机制 (柔电和压电).
主要成果:
- PLZT ((8/30/70) 在曲过程中表现出柔电极化和压电极化.
- 这些极化效应是相反的方向,导致稳定的V_Dirac.
- 与PLZT ((8/52/48) 相比,PLZT ((8/30/70) 在曲下显示出明显更稳定的V_Dirac.
结论:
- 在PLZT ((8/30/70) 中相反的柔电和压电效应在柔性GFET中提供了显著的V_Dirac稳定性.
- PLZT ((8/30/70)) 门式GFET显示出强大可靠的灵活电子应用的巨大潜力.
- 这项研究强调了理解极化机制对于设计高性能灵活铁电器件的重要性.
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