改进AlGaN/GaN HEMT的线性使用卡带应用的蚀刻细门结构
Ming-Wen Lee1,2, Yueh-Chin Lin1, Heng-Tung Hsu1
1International College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu City 30010, Taiwan.
Micromachines
|May 27, 2023
概括
研究人员在AlGaN/GaN HEMT中开发了蚀刻门结构,以提高Ka频段应用的线性. 四个的设计优化了线性,IMD3提高了7dB,达到36.43dBm的OIP3.
科学领域:
- 材料科学 材料科学 材料科学
- 电气工程 电气工程
- 半导体设备 半导体设备
背景情况:
- 高电子流动性晶体管 (HEMT) 对于高频应用至关重要.
- 设备线性是功率放大器的关键性能指标.
- 对于毫米波频率,AlGaN/GaN HEMTs提供了卓越的性能特征.
研究的目的:
- 为了研究雕刻翼门结构对AlGaN/GaN HEMT线性的影响.
- 为了优化Ka频段无线应用的设备线性.
- 为了确定最佳数量的蚀刻,以提高性能.
主要方法:
- 制造AlGaN/GaN HEMT,具有不同数量的蚀刻翼门结构 (平面,一,四,九).
- 使用外部传导率 (Gm),输出第三阶交点 (OIP3) 和第三阶互调输出功率 (IMD3) 来描述设备线性.
- 在Ka频段 (30GHz) 频率下对设备性能进行分析.
主要成果:
- 四个雕刻的门AlGaN/GaN HEMT证明了优化的线性.
- 在30 GHz时,IMD3在4 × 50μm HEMT中得到了7dB的改进.
- 最大的OIP3达到36.43dBm与四个的翅膀装置.
结论:
- 雕刻的翼门结构显著提高了AlGaN/GaN HEMT的线性.
- 四个嵌的设计为Ka频段应用中的线性提供了最佳的权衡.
- 这些优化的HEMT显示了先进无线功率放大器组件的高潜力.
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