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基于GaN的微型LED的最新进展

Youwei Zhang¹, Ruiqiang Xu¹, Qiushi Kang²

¹Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Physics and Opto-Electronic Engineering, Guangdong University of Technology, Guangzhou 510006, China.

|May 27, 2023

概括

此摘要是机器生成的。

基于化 (GaN) 的微型发光二极管 (μLED) 提供了优势,但受到低外部量子效率 (EQE) 的损害. 本综述探讨了EQE差的原因,并讨论了GaN μLED的优化策略.

关键词:

美国的EQE是EQE 在 GaN GaN 中.微型LED是什么意思非辐射重组的非辐射重组.效果的大小效果大小效果

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科学领域:

光电学是指光电子产品.
材料科学材料科学材料科学
半导体设备半导体设备

背景情况:

基于化 (GaN) 的微型发光二极管 (μLED) 对显示器和可见光通信 (VLC) 是有前途的.
它们的小尺寸提供了诸如增强电流传播和减少自热等好处.
然而,低的外部量子效率 (EQE) 阻碍了它们的广泛应用.

研究的目的:

审查基于GaN的μLED低EQE背后的根本原因.
探索各种优化技术,旨在提高这些设备的EQE.

主要方法:

对GaN μLED研究的文献综述.
分析导致非辐射重组的因素.
研究量子局限斯塔克效应 (QCSE) 的影响.

主要成果:

非辐射重组和QCSE被确定为GaN μLED中劣质EQE的主要原因.
优化策略的重点是减轻这些效率损失机制.
改善EQE对于释放μLED技术的全部潜力至关重要.

结论:

解决非辐射重组和QCSE对于提高GaN μLED性能至关重要.
对优化技术的进一步研究将推动在新型应用中采用μLED.
增强的EQE将使卓越的显示和通信技术成为可能.