在柔性基板上形成的多层薄膜的巨型磁阻效应
Mengyu Liu1,2,3, Zhenbao Wang1,2,3, Ziqin Meng1,2,3
1School of Electronic and Information Engineering/School of Integrated Circuits, Guangxi Normal University, Guilin 541004, China.
Micromachines
|May 27, 2023
概括
多层薄膜中的巨型磁阻抗 (GMI) 被压力应力增强,提高了磁传感器性能. 拉伸应力减少了这种效应,为灵活的传感器开发提供了洞察力.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 纳米技术 纳米技术
背景情况:
- 在多层薄膜中的巨型磁阻抗 (GMI) 效应显示出对磁传感应用的希望.
- 关于这些材料中压力对GMI的影响的研究有限.
研究的目的:
- 为了研究在不同压力条件下的多层薄膜道中的巨型磁阻效应.
- 探索拉力和压力应力对GMI行为的影响.
主要方法:
- 在聚胺 (PI) 和聚 (PET) 基板上制造FeNi/Cu/FeNi多层薄膜曲体,使用DC磁喷射和MEMS技术.
- 使用扫描电子显微镜 (SEM),原子力显微镜 (AFM),X射线衍射 (XRD) 和振动样本磁力学 (VSM) 的表征.
- 在应用纵向拉伸和压力下观察GMI效应.
主要成果:
- 在柔性基板上的多层薄膜曲呈现出良好的密度,高晶度和优良的软磁性.
- 纵向压力应力通过增加横向异构性来增强GMI效应.
- 纵向拉伸应力减少了GMI效应.
结论:
- 压力显著调节多层薄膜的GMI效应.
- 压缩应力提供了一种提高GMI传感器性能的方法.
- 这些发现为开发更稳定,更灵活的GMI传感器和应力传感器提供了解决方案.
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