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使用X参数和紫外线照明对GaN HEMT的大信号特征捕获效应的分析

Kun-Ming Chen¹, Chuang-Ju Lin^1,2, Chia-Wei Chuang¹

¹Taiwan Semiconductor Research Institute, Hsinchu 300091, Taiwan.

|May 27, 2023

概括

紫外线影响高电子移动性晶体管 (HEMT) 的化 (GaN) 性能,因为它会影响电荷捕获. 在AlGaN/GaN晶体管中最小化陷对于最佳的大信号射频 (RF) 功率至关重要.

科学领域:

材料科学材料科学材料科学
电气工程电气工程
半导体物理半导体物理

背景情况:

高电子流动性的化 (GaN) 晶体管 (HEMT) 对于高功率微波应用至关重要.
在HEMT中的电荷捕获效应限制了设备的性能,特别是在照明下.
了解这些影响对于优化射频 (RF) 电源设备至关重要.

研究的目的:

研究电荷捕获对AlGaN/GaN HEMT和金属绝缘半导体 HEMT (MIS-HEMT) 在紫外线 (UV) 照明下的大信号行为的影响.
分析紫外线对来自X参数测量的设备性能指标的影响.
为了比较被动化和非被动化HEMT的射频性能和紫外线敏感性.

主要方法:

在紫外线照明下使用X参数测量对AlGaN/GaN HEMT和MIS-HEMT进行表征.
在基本和频率上分析大信号输出波 (X21FB) 和小信号前向增强 (X2111S).
基于X参数数据的射频 (RF) 功率参数和信号波形的建模.

主要成果:

对于没有受体化的HEMT,紫外线照明增加了基本增益 (X21FB,X2111S) 和减少了第二输出 (X22FB),这是由于光导和缓冲陷的减少.
具有SiN被动化的MIS-HEMT表现出更高的X21FB和X2111S,这表明通过减轻表面状态来改善射频功率性能.
MIS-HEMT显示紫外线光的依赖性降低,因为光诱导的增强被SiN层陷抵消.

结论:

在AlGaN表面,GaN缓冲区和SiN被动化层中最大限度地降低陷密度,对于在AlGaN/GaN晶体管中实现卓越的大信号性能至关重要.
表面被动化策略,如MIS-HEMT中的SiN,可以增强射频功率能力,但需要仔细管理被动化层内的陷状态.
X参数测量为充电捕获,紫外线照明和先进半导体设备的大信号行为之间的复杂相互作用提供了宝贵的见解.

关键词:

在 GaN GaN 中.这里是HEMT.紫外线照明是一种UV照明.这是一个X参数.大信号的特征描述.诱捕效应诱捕效应是一种诱捕效应.

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