在电源MOSFET中单一事件燃烧的温度依赖性研究
Chen Wang1, Yi Liu1, Changqing Xu2
1Laboratory of Digital IC and Space Application, School of Microelectronics, Xidian University, Xi'an 710071, China.
Micromachines
|May 27, 2023
概括
电源MOSFET在高温下暴露于高线性能量转移 (LET) 辐射时,对单一事件燃烧 (SEB) 的脆弱性增加. 这与较低的LET条件形成鲜明对比,其中较高的温度为SEB提供了更大的耐受性.
科学领域:
- 半导体物理 半导体物理
- 电子产品中的辐射效应.
- 电力电子的可靠性 电力电子的可靠性
背景情况:
- 功率MOSFET是太空和军事应用中的关键组件.
- 这些设备必须在广泛的温度范围 (-55°C至150°C) 中可靠运行.
- 单一事件燃烧 (SEB) 是在太空辐射下显著的故障机制.
研究的目的:
- 为了研究SEB在功率MOSFET中的温度依赖性.
- 了解变化的线性能量转移 (LET) 如何影响SEB易感度与温度.
- 在不同的LET级别和温度下识别主要的故障机制.
主要方法:
- 利用模拟结果来分析SEB的行为.
- 研究了温度对冲击电离率的影响.
- 研究了SEB中的寄生性双极连接晶体管 (BJT) 的作用.
主要成果:
- 在较低的LET (10 MeV·cm2/mg) 时,较高的温度会增加SEB的耐受性,因为冲击电离的减少.
- 在高LET (>40 MeV·cm2/mg) 时,寄生虫BJT主导SEB,显示相反的温度依赖.
- 温度升高有助于寄生性BJT开启和电流增益,促进再生反和SEB.
结论:
- 功率MOSFET中的SEB易感性取决于温度,其行为与LET显著不同.
- 对于高LET辐射,随着温度的升高,功率MOSFET变得更容易受到SEB的影响.
- 了解这些取决于温度的效应对于设计抗辐射强化功率电子设备至关重要.
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