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一个性能优化的CSTBT,具有低开关损失
Hang Xu1, Tianyang Feng1, Wenrong Cui1
1School of Microelectronics, Fudan University, Shanghai 200433, China.
Micromachines
|May 27, 2023
概括
一个新的载体存储沟门双极晶体管 (CSTBT) 通过增强载体存储和孔堵塞来减少切换损失. 这种新的设计可以提高功率电子应用中的效率和性能.
科学领域:
- 电力电子 电力电子 电力电子
- 半导体设备 半导体设备
- 固态物理 固态物理
背景情况:
- 传统的载波存储沟门双极晶体管 (CSTBT) 在切换损失和效率方面面临限制.
- 载体储存效应和孔堵塞是影响CSTBT性能的关键参数.
- 在高频电源应用中,优化传导和开关损耗至关重要.
研究的目的:
- 提出一种新的性能优化载波存储沟门双极晶体管 (CSTBT),降低开关损失.
- 为了研究正直流电压对屏蔽门的影响,以提高性能.
- 为了改善ON状态电压,阻断特性和短路性能.
主要方法:
- 在CSTBT的屏蔽门上实施正直流电压偏差.
- 对载体储存增强和孔堵塞能力的分析.
- 基于模拟的比较与传统的Shield CSTBT (Con-SGCSTBT),重点关注能量损失 (Eoff,Eon) 和短路持续时间.
主要成果:
- 关机损失 (Eoff) 显著减少35.1%,开机损失 (Eon) 显著减少35.9%.
- 提高了孔堵塞能力和减少了导电损失.
- 在高频应用中实现了2.48倍的短路持续时间和35%的总功耗损失.
结论:
- 拟议的CSTBT带有DC偏差屏蔽门,与传统设计相比,提供了更高的性能.
- 增强的载体存储和孔导通路径有效地降低了切换损失.
- 这种方法为高性能功率电子提供了可行和有效的解决方案.
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