一个低损耗的1.2kV SiC MOSFET,具有改进的UIS性能
Lijuan Wu1, Mengyuan Zhang1, Jiahui Liang1
1School of Physics & Electronic Science, Changsha University of Science & Technology, Changsha 410114, China.
Micromachines
|May 27, 2023
概括
一种具有集成低屏障二极管 (DT-LBDMOS) 的新型双沟4H-SiC MOSFET消除了体二极管降解并减少了切换损失. 这种碳化设备提供了更好的雪崩稳定性和更低的电力电子器件的电阻.
科学领域:
- 材料科学 材料科学 材料科学
- 电气工程 电气工程
- 半导体物理 半导体物理
背景情况:
- 碳化 (SiC) MOSFET由于其优越的性能,对高功率应用至关重要.
- 传统的SiC MOSFET面临着诸如身体二极管的双极性降解和显著的切换损失等挑战.
- 提高雪崩稳定性和降低电阻是先进的SiC电源设备的关键目标.
研究的目的:
- 提出和分析一个1.2kV级的双槽4H-SiC MOSFET与集成的低阻隔二极管 (DT-LBDMOS).
- 为了证明消除体二极管双极性降解和减少开关损失.
- 为了提高雪崩的稳定性和改善整体设备性能指标.
主要方法:
- 使用数值模拟来验证设备物理和电子传输机制.
- 拟议的DT-LBDMOS与门p-shield沟4H-SiC MOSFET (GPMOS) 进行了比较.
- 评估了关键性能参数,包括反向启动电压,反向恢复电荷,门到排水电容,开关损失和启动电阻.
- 进行了无式感应切换 (UIS) 测试,以评估雪崩的能量和稳定性.
主要成果:
- 集成的低屏障二极管 (LBD) 创造了一个更容易的电子传输路径,消除了体二极管双极性降解.
- 与GPMOS相比,DT-LBDMOS的反向电压下降了37.8% (1.54V与2.46V相比).
- 观察到反向回收负荷 (28%),门到排水容量 (76%),开启损失 (52%) 和关闭损失 (35%) 的显著减少.
- 由于弱化的接口状态散射,特定的电阻下降了34%,改善了HF-FOM和P-FOM.
- 通过UIS测试证实了增强的雪崩能量和稳定性.
结论:
- 拟议的DT-LBDMOS有效地克服了SiC MOSFET中的双极降解问题.
- 集成的LBD显著提高了设备的性能,包括更低的损失和更好的稳定性.
- DT-LBDMOS在高性能功率电子设备中的实际应用具有相当大的潜力.
相关概念视频
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